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PDF A1319 Data sheet ( Hoja de datos )
| Número de pieza | A1319 | |
| Descripción | PNP Transistor - 2SA1319 | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN1334C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1319/2SC3332
High-Voltage Switching Applications
Features
· Hgih breakdown voltage.
· Excellent hFE linearity.
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
Switching Test Circuit
Package Dimensions
unit:mm
2003A
[2SA1319/2SC3332]
( ) : 2SA1319
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
Specifications
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
B : Base
C : Collector
E : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)180
(–)160
(–)6
(–)0.7
(–)1.5
700
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V
IC=(–)250mA, IB=(–)25mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)250mA, IB=(–)25mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SA1319/2SC3332 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400
Ratings
min typ
100*
80
120
(11)8
(0.20)
0.12
(–)0.85
(–)180
(–)160
(–)6
(60)50
(900)
1000
(60)60
max
(–)0.1
(–)0.1
400*
(0.5)
0.4
(–)1.2
Unit
µA
µA
MHz
pF
V
V
V
V
V
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/3
Free Datasheet http://www.Datasheet4U.com
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| PDF Descargar | [ Datasheet A1319.PDF ] | |
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