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Datasheet GA10JT12-CAL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GA10JT12-CAL | Normally - OFF Silicon Carbide Junction Transistor GA10JT12-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Posit |  GeneSiC | transistor |
GA1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GA100 | SCRs Nuclear Radiation Resistant/ Planar Microsemi Corporation data | | |
| 2 | GA100NA60U | INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet.co.kr
PD - 94290
GA100NA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated packag  International Rectifier transistor | | |
| 3 | GA100NA60UP | Insulated Gate Bipolar Transistor www.DataSheet.co.kr
GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
• Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • F  Vishay Siliconix transistor | | |
| 4 | GA100TS120U | HALF-BRIDGE IGBT INT-A-PAK PD - 50060B
GA100TS120U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- so International Rectifier igbt | | |
| 5 | GA100TS120UPBF | IGBT, Insulated Gate Bipolar Transistor www.DataSheet.co.kr
GA100TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A
FEATURES
• Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switc Vishay Siliconix igbt | | |
| 6 | GA100TS60SF | Standard Speed IGBT www.DataSheet.co.kr
Bulletin I27201 rev. A 01/06
GA100TS60SF
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Features
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• • • •
Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending
VCES = 600V IC = 220A DC V International Rectifier igbt | | |
| 7 | GA100TS60SFPBF | IGBT, Insulated Gate Bipolar Transistor www.DataSheet.co.kr
GA100TS60SFPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 A
FEATURES
• Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt® antiparallel diodes with fast recovery • Very l Vishay Siliconix igbt | |
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