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Número de pieza | RTQ020N03 | |
Descripción | 2.5V Drive Nch MOS FET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RTQ020N03 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Transistors
2.5V Drive Nch MOS FET
RTQ020N03
RTQ020N03
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (2.5V drive).
zApplications
Switching
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0~0.1
0.4 0.16
Each lead has same dimensions
Abbreviated symbol : QS
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTQ020N03
Taping
TR
3000
zInner circuit
(6)
(5) (4)
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
12
±2.0
±8.0
1.0
8.0
1.25
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
100
Unit
°C/W
1/2
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet RTQ020N03.PDF ] |
Número de pieza | Descripción | Fabricantes |
RTQ020N03 | 2.5V Drive Nch MOS FET | ROHM Semiconductor |
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