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R5013ANX Datasheet PDF - Rohm

Part Number R5013ANX
Description 10V Drive Nch MOSFET
Manufacturers Rohm 
Logo Rohm Logo 

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R5013ANX datasheet, circuit
Transistors
10V Drive Nch MOSFET
R5013ANX
R5013ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS)
guaranteed to be r30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
zApplications
Switching
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5013ANX
Bulk
500
zInner circuit
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
3
1
3
1
±30
±13
±52
13
52
Avalanche Current
IAS 2
13
Avalanche Energy
EAS 2
46
Total power dissipation (Tc=25°C)
PD
50
Channel temperature
Tch 150
Range of storage temperature
Tstg
1 Pw10μs, Duty cycle1%
2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
3 Limited only by maximum tempterature allowed
55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
(1)
(1) Gate
(2) Drain
(3) Source
Unit
°C/W
1
(2) (3)
1 Body Diode
Rev.A
1/5

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R5013ANX equivalent
Transistors
zSwitching characteristics measurement circuit













Fig.1 Switching time measurement circuit!






IG(Const.)








Fig.3 Gate charge measurement circuit!
















Fig.5 Avalanche measurement circuit
R5013ANX
Fig.2 Switching waveforms 
Fig.4 Gate charge waveform 
Fig.6 Avalanche waveform
Rev.A
5/5

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Information Total 6 Pages
Download[ R5013ANX.PDF Datasheet ]

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