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PDF R5011ANX Data sheet ( Hoja de datos )
| Número de pieza | R5011ANX | |
| Descripción | 10V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
10V Drive Nch MOSFET
R5011ANX
R5011ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS)
guaranteed to be r30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
zApplications
Switching
zPackaging specifications
Package
Type Code
Basic ordering unit (pieces)
R5011ANX
Bulk
−
500
zInner circuit
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
∗3
∗1
∗3
∗1
±30
±11
±44
11
44
Avalanche Current
IAS ∗2
5.5
Avalanche Energy
EAS ∗2
8.1
Total power dissipation (Tc=25°C)
PD
50
Channel temperature
Tch 150
Range of storage temperature
Tstg
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
(1)
(1) Gate
(2) Drain
(3) Source
∗1
(2) (3)
∗1 Body Diode
1/5
1 page  
Transistors
zSwitching characteristics measurement circuit
Fig.1-1 Switching Time Measurement Circuit!
IG(Const.)
Fig.2-1 Gate Charge Measurement Circuit!
Fig.3-1 Avalanche Measurement Circuit
R5011ANX
Fig.1-2 Switching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Avalanche Waveform
5/5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet R5011ANX.PDF ] | |
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