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PDF R5021ANJ Data sheet ( Hoja de datos )
| Número de pieza | R5021ANJ | |
| Descripción | Nch 500V 21A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R5021ANJ
Nch 500V 21A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
lFeatures
1) Low on-resistance.
500V
0.22W
21A
100W
lOutline
LPTS
(SC-83)
TO-263(D2PAK)
(2)
(1)
lInner circuit
(3)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
lApplication
Switching Power Supply
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
330
24
1,000
Taping code
TL
Marking
R5021ANJ
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
500
21
10.2
84
30
29.6
6.7
10.5
100
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.10 - Rev.B
1 page  
R5021ANJ
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
10
Operation in this
area is limited
by RDS(ON)
PW = 100ms
1 PW = 1ms
PW = 10ms
0.1
Ta = 25ºC
Single Pulse
0.01
0.1
1
10
100 1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 80ºC/W
1
0.1
0.01
0.001
0.0001
0.0001
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 100
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.10 - Rev.B
5 Page 
R5021ANJ
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS= 0V
Pulsed
10
1
Ta= 125ºC
Ta= 75ºC
0.1
Ta= 25ºC
Ta= -25ºC
0.01
0 0.5 1 1.5
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
10000
1000
100
10
0
Ta=25ºC
di / dt = 100A / ms
VGS = 0V
Pulsed
1 10 100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/13
2012.10 - Rev.B
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R5021ANJ.PDF ] | |
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