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RTQ020N05 Datasheet PDF - Rohm

Part Number RTQ020N05
Description Nch 45V 2A Power MOSFET
Manufacturers Rohm 
Logo Rohm Logo 

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RTQ020N05 datasheet, circuit
RTQ020N05
Nch 45V 2A Power MOSFET
VDSS
RDS(on) (Max.)
ID
PD
45V
190mW
2A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
lOutline
TSMT6
SOT-457T
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
PU
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
45
2
8
12
1.25
0.6
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.10 - Rev.B

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RTQ020N05 equivalent
RTQ020N05
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
2
Ta=25ºC
Pulsed
1.5 VGS= 10.0V
VGS= 4.5V
VGS= 4.0V
1
VGS= 1.8V
VGS= 2.5V
0.5 VGS= 2.0V
0
0 0.2 0.4 0.6 0.8 1
Drain - Source Voltage : VDS [V]
Data Sheet
Fig.6 Typical Output Characteristics(II)
2
VGS= 10.0V
VGS= 4.5V
1.5 VGS= 4.0V
VGS= 2.5V
1
VGS= 2.0V
Ta=25ºC
Pulsed
VGS= 1.8V
0.5
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
80
VGS = 0V
ID = 1mA
Pulsed
60
40
Fig.8 Typical Transfer Characteristics
10
VDS= 10V
Pulsed
1 Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
0.1 Ta= -25ºC
20 0.01
0
-50
0 50 100 150
Junction Temperature : Tj [°C]
0.001
0
0.5 1 1.5 2 2.5
Gate - Source Voltage : VGS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/11
2012.10 - Rev.B

5 Page
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Information Total 12 Pages
Download[ RTQ020N05.PDF Datasheet ]

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