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PDF RSY160P05 Data sheet ( Hoja de datos )
| Número de pieza | RSY160P05 | |
| Descripción | 4V Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
4V Drive Pch MOSFET
RSY160P05
RSY160P05
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Same land pattern as CPT3 (D-PAK).
zApplication
Switching
zDimensions (Unit : mm)
TCPT
(2)
(1) (3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSY160P05
Taping
TL
2500
zEquivalent circuit
∗1
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Tc=25°C
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−45
±20
±16
±32
−16
−32
20
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Tc=25°C
Symbol
Rth (ch-c) ∗
Limits
6.25
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Gate
(2) Drain
(3) Source
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
1/5
1 page  
Transistors
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.14 Switching Time Test Circuit
VGS
IG (Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.16 Gate Charge Test Circuit
RSY160P05
Pulse Width
VGS 10%
50%
50%
90%
10%
10%
VDS
td(on)
90%
tr
td(off)
90%
tf
ton toff
Fig.15 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.17 Gate Charge Waveform
5/5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RSY160P05.PDF ] | |
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