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What is NTHD4502N?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Power MOSFET ( Transistor )".


NTHD4502N Datasheet PDF - ON Semiconductor

Part Number NTHD4502N
Description Power MOSFET ( Transistor )
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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NTHD4502N
Power MOSFET
30 V, 3.9 A, Dual NChannel ChipFETt
Features
Planar Technology Device Offers Low RDS(on) and Fast Switching Speed
Leadless ChipFET Package has 40% Smaller Footprint than TSOP6.
Ideal Device for Applications Where Board Space is at a Premium.
ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Buck or Boost Converters
Low Side Switching
Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t5s
Steady
State
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
30
±20
2.9
2.1
3.9
1.13
2.1
2.2
1.6
0.64
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
ESD Capability
(Note 3)
C = 100 pF,
RS = 1500 W
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
ESD
HBM
TJ,
TSTG
IS
TL
12
125
55 to
150
2.5
260
A
V
°C
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: HBM Class 0.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
80 mW @ 10 V
110 mW @ 4.5 V
ID MAX
3.9 A
D1 (7, 8)
D2 (5, 6)
G1 G2
(2) (4)
S1 (1)
NChannel MOSFET
S2 (3)
8
1
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
C5 = Specific Device Code
M = Month Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NTHD4502NT1G ChipFET 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. 6
1
Publication Order Number:
NTHD4502N/D

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NTHD4502N equivalent
NTHD4502N
TYPICAL PERFORMANCE CURVES
300
VDS = 0 V
CISS
200
CRSS
VGS = 0 V
TJ = 25°C
12
10
8 VDS
6
24
QG 20
16
VGS
12
100 4
COSS
2
00
10 5 0 5 10 15 20 25 30
VGS VDS
0
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
QGS
QGD
8
ID = 2.9 A
TJ = 25°C
4
1 23
QG, TOTAL GATE CHARGE (nC)
0
4
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
100
10
td(off)
td(on)
tr
3
VGS = 0 V
TJ = 25°C
2
1
tf
0.1
1
VDD = 24 V
ID = 1.0 A
VGS = 10 V
10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
NTHD4502NThe function is Power MOSFET ( Transistor ). ON SemiconductorON Semiconductor

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