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PDF IXFR14N80 Data sheet ( Hoja de datos )
| Número de pieza | IXFR14N80 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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HiPerFETTM Power MOSFETs IXFR 14N80
IsoPlus247TM
(Electrically Isolated Tab)
N-Channel Enhancement Mode
High dv/dt, Low t , HDMOSTM Family
rr
V = 800
DSS
ID25 = 14
=RDS(on) 0.7
V
A
Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
VISOL
Weight
Symbol
VDSS
V
GS(th)
IGSS
IDSS
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute leads-to-tab
Maximum Ratings
800 V
800 V
±20 V
±30 V
14 A
56 A
14 A
45 mJ
5 V/ns
ISOPLUS 247
Isolated mounting tab*
G = Gate
S = Source
D = Drain
* Patent pending
250
-55 ... +150
150
-55 ... +150
300
2500
6
W
°C Features
°C z Isolated mounting tab
°C z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
°C z Unclamped Inductive Switching (UIS)
V rated
z Low drain to tab capacitance(<25pF)
g z Fast intrinsic Rectifier
Test Conditions
VGS = 0 V, ID = 3 mA
V = V , I = 4 mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
800
2
TJ = 25°C
TJ = 125°C
V
4.5 V
±100 nA
250 µA
1 mA
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2002 IXYS All rights reserved
DS98528A(12/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFR14N80.PDF ] | |
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