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PDF FII30-06D Data sheet ( Hoja de datos )
| Número de pieza | FII30-06D | |
| Descripción | IGBT phaseleg | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FII30-06D (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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IGBT phaseleg
in ISOPLUS i4-PAC™
FII 30-06D
IC25 = 30 A
VCES = 600 V
VCE(sat) typ. = 1.9 V
3
5
4
1 E72873
2
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
RBSOA Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 47 Ω
TVJ = 125°C; non-repetitive
TC = 25°C
Maximum Ratings
600 V
± 20 V
30
18
40
VCES
10
A
A
A
µs
100 W
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 20 A; VGE = 15 V
IC = 0.5 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ± 20 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Inductive load
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 Ω
TVJ = 125°C
1.9
2.2
4.5
0.6
50
55
200
30
0.75
0.6
2.4 V
V
6.5 V
0.6 mA
mA
200 nA
ns
ns
ns
ns
mJ
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 20 A
with heatsink compound
1.1 nF
65 nC
1.25 K/W
2.5 K/W
Features
• NPT IGBT technology
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFRED™ diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
1-5
1 page  
FII 30-06D
Diode
40
A
IF 30
20
TVJ=150°C
TVJ=100°C
TVJ= 25°C
10
2000
nC
TVVRJ==
100°C
300V
1500
Qr
1000
500
IF= 30A
IF= 15A
IF= 7.5A
40
TVJ= 100°C
A VR = 300V
30
IRM
20
IIFF==
30A
15A
IF= 7.5A
10
0
0 1 2V
VF
Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
0
100 A/µs 1000
-diF/dt
Reverse recovery
versus -diF/dt
charge
Qr
120
ns
trr 110
100
90
TVVRJ==
100°C
300V
IIFF==
30A
15A
IF= 7.5A
80
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Peak reverse
versus -diF/dt
current
IRM
20
V
TIFVJ==
100°C
15A
VFR
15
1.6
VFR µs
tfr
1.2
tfr
10
0.8
5 0.4
0.0
0
40 80 120 °C 160
TVJ
Dynamic parameters
versus TVJ
Qr,
IRM
70
0 200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
15-06A
0 0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Peak forward
versus diF/dt
voltage
VFR
and
tfr
10 (µZmthJHthisermmeaal sgurreeadseu)sing 50
1
0.00001 0.0001 0.001
0.01 t(s) 0.1
1
Transient thermal resistance junction to heatsink
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
FRED
0.1 ZthJH [K/W]
0.01
0.001
10 100
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FII30-06D.PDF ] | |
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