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PDF IXGN320N60A3 Data sheet ( Hoja de datos )
| Número de pieza | IXGN320N60A3 | |
| Descripción | 600V IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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GenX3TM 600V IGBT
IXGN320N60A3
Ultra-Low-Vsat PT IGBT for
up to 5kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ILRMS
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGE = 1M
Continuous
Transient
TC = 25C (Chip Capability)
TTeC rm= i1n1a0l CCurrent Limit
TC = 25C, 1ms
VGE= 15V, TVJ = 125C, RG = 1
Clamped Inductive Load
TC = 25C
50/60Hz
t = 1min
IISOL 1mA
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
E
Maximum Ratings
600 V
600 V
±20 V
±30 V
320
170
200
1200
A
A
A
A
ICM = 320
@0.8 • VCES
735
A
W
-55 ... +150
150
-55 ... +150
C
C
C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES VCE = 0V, VGE = ±20V
TJ = 125C
VCE(sat)
IC = 100A, VGE = 15V, Note 1
IC = 320A
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
150 μA
1.5 mA
±400 nA
1.05 1.30 V
1.46 V
VCES =
IC110 =
VCE(sat)
600V
170A
1.30V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
Either Emitter Terminal Can Be Used
as Main or Kelvin Emitter
Features
Optimized for Low Conduction Losses
High Avalanche Capability
Isolation Voltage 3000 V~
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
© 2015 IXYS CORPORATION, All Rights Reserved
DS99576E(01/15)
1 page  
Fig.11. Resistive Turn-on Rise Time
vs. Junction Temperature
170
RG = 1Ω , VGE = 15V
150 VCE = 400V
130 IC = 320A
110
IC = 160A
90
70 IC = 80A
50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 13. Resistive Turn-on Switching Times
vs. Gate Resistance
450
400 t r
td(on) - - - -
TJ = 125ºC, VGE = 15V
350 VCE = 400V
88
84
80
300 I C = 320A, 160A, 80A
250
76
72
200 68
150 64
100
I C = 80A
60
50 56
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 15. Resistive Turn-off Switching Times
vs. Collector Current
1600
350
1400
TJ = 125ºC
325
1200
300
1000
800
TJ = 25ºC
275
250
600 225
t f td(off) - - - -
400 RG = 1Ω, VGE = 15V
200
VCE = 400V
200
80
175
120 160 200 240 280 320
IC - Amperes
IXGN320N60A3
Fig. 12. Resistive Turn-on Rise Time
vs. Collector Current
170
RG = 1Ω , VGE = 15V
150 VCE = 400V
130
TJ = 125ºC
110
90
70 TJ = 25ºC
50
80
100 120 140 160 180 200 220 240 260 280 300 320
IC - Amperes
Fig. 14. Resistive Turn-off Switching Times
vs. Junction Temperature
1700
1500
t f td(off) - - - -
RG = 1Ω, VGE = 15V
VCE = 400V
I C = 80A
1300
1100
I C = 160A
380
340
300
260
900 220
I C = 320A
700 180
500 140
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
1
Fig. 16. Resistive Turn-off Switching Times
vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 400V
I C = 160A
I C = 80A
I C = 320A
23456789
RG - Ohms
1000
900
800
700
600
500
400
300
200
100
10
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_320N60A3(96)7-03-08-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGN320N60A3.PDF ] | |
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