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Número de pieza | AO3422 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO3422 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AO3422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 2.5V to
12V. This device is suitable for use as a load switch.
Features
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 4.5V)
RDS(ON) < 200mΩ (VGS = 2.5V)
SOT23
Top View
Bottom View
DD
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
55
±12
2.1
1.7
10
1.25
0.8
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
75
115
48
Max
100
150
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page AO3422
c
+
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
2
AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd
IF dI/dt
trr
+
VDC Vdd
IRM
- Vds
Vdd
Alpha & Omega Semiconductor, Ltd.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AO3422.PDF ] |
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