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PDF AOL1454 Data sheet ( Hoja de datos )
| Número de pieza | AOL1454 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1454
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1454 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
VDS (V) = 40V
ID = 50A (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
S
G
Bottom tab
connected to
drain
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C H
Current B
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
Power Dissipation B
Power Dissipation A
TC=25°C
TC=100°C
TA=25°C
TA=70°C
VDS
VGS
ID
IDM
IDSM
IAR
EAR
PD
PDSM
Junction and Storage Temperature Range TJ, TSTG
G
Maximum
40
±20
50
48
100
12
10
30
135
60
30
2.1
1.3
-55 to 175
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
50
1.8
Max
25
60
2.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100 ID=250uA, VGS=0V
80 VDS=40V, VGS=0V
60 TA=25°C
TA=150°C
40
20
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
80
70
60
50
40
±100
uA
30
20
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
500
150
100 60
90 TA=25°C
80
70
60
50
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=60°C/W
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOL1454.PDF ] | |
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