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Número de pieza | AON6414 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON6414 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AON6414
30V N-Channel MOSFET
General Description
Product Summary
The AON6414 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
30A
< 10.5mΩ
< 17mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
30
28
120
11
9
30
135
36
14
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
2.6
Max
30
64
3.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: March 2011
www.aosmd.com
Page 1 of 6
1 page AON6414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 40
80
tA
=
L⋅ID
BV −VDD
32
60 24
40 16
20 TA=25°C
8
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note B)
150
35
30
25
20
15
10
5
0
0
10
1
50
TJ(Max)=150°C
40 TA=25°C
30
20
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note B)
150
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=64°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 4: March 2011
www.aosmd.com
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AON6414.PDF ] |
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