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What is FQA11N90_F109?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel QFET MOSFET".


FQA11N90_F109 Datasheet PDF - Fairchild Semiconductor

Part Number FQA11N90_F109
Description N-Channel QFET MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V,
ID = 5.7 A
• Low Gate Charge (Typ. 72 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
• RoHS compliant
June 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, active power factor
correction (PFC), and electronic lamp ballasts.
D
G
D
S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
S
FQA11N90_F109
900
11.4
7.2
45.6
± 30
1000
11.4
30
4.0
300
2.38
-55 to +150
300
FQA11N90_F109
0.42
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C2
1
www.fairchildsemi.com

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FQA11N90_F109 equivalent
Figure 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
IG = co3nmsAt.
DUT
Qg
Qgd
Charge
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
V1G0GVSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C2
5
www.fairchildsemi.com


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Part NumberDescriptionMFRS
FQA11N90_F109The function is N-Channel QFET MOSFET. Fairchild SemiconductorFairchild Semiconductor

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