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Número de pieza | AUIRFB8405 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! AUTOMOTIVE GRADE
AUIRFB8405
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other applications.
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
40V
2.1mΩ
2.5mΩ
ID (Silicon Limited)
185A
S
ID (Package Limited)
120A
G
Gate
D
DS
G
TO-220AB
AUIRFB8405
D
Drain
S
Source
Base part number
AUIRFB8405
Package Type
TO-220
Standard Pack
Form
Tube
Quantity
50
Orderable Part Number
AUIRFB8405
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
185
131
120
904
163
1.1
± 20
-55 to + 175
300
10lbf in (1.1N m)
Units
A
W
W/°C
V
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 30, 2013
1 page 1000
TJ = 175°C
100
10 TJ = 25°C
VGS = 0V
1.0
0.2 0.6 1.0 1.4 1.8 2.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
Limited By Package
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
5 www.irf.com © 2013 International Rectifier
AUIRFB8405
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
Limited by package
10
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
50
Id = 1.0mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
800
700
TOP
ID
17A
600
36A
BOTTOM 100A
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
5 Page AUIRFB8405
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
TO-220
N/A
Class M3 (+/- 400V)††
AEC-Q101-002
Class H1C (+/- 2000V)††
AEC-Q101-001
Class C5 (+/- 2000V)††
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
11 www.irf.com © 2013 International Rectifier
April 30, 2013
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet AUIRFB8405.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRFB8405 | Power MOSFET ( Transistor ) | International Rectifier |
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