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What is G25T120?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Low Loss IGBT".


G25T120 Datasheet PDF - Infineon

Part Number G25T120
Description Low Loss IGBT
Manufacturers Infineon 
Logo Infineon Logo 


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TrenchStop® Series
IGW25T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
IGW25T120 1200V 25A
1.7V
150°C G25T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
50
25
75
75
±20
10
190
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09

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G25T120 equivalent
TrenchStop® Series
IGW25T120
70A
60A
VGE=17V
50A 15V
13V
40A 11V
9V
30A
7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
70A
60A
VGE=17V
50A 15V
13V
40A 11V
9V
30A
7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
70A
60A
50A
40A
30A
20A
10A
TJ=150°C
25°C
0A
0V 2V 4V 6V 8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
IC=50A
2,0V
1,5V
1,0V
IC=25A
IC=15A
IC=8A
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.4 Nov. 09


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for G25T120 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
G25T120The function is Low Loss IGBT. InfineonInfineon

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