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FDP054N10 PDF Datasheet - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

Part Number FDP054N10
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
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FDP054N10 datasheet, circuit
FDP054N10
N-Channel PowerTrench® MOSFET
100 V, 144 A, 5.5 mΩ
November 2013
Features
• RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP054N10
100
±20
144
102
120
576
1153
6
263
1.75
-55 to +175
300
FDP054N10
0.57
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
1
www.fairchildsemi.com

1 page

FDP054N10 pdf, schematic
Package Marking and Ordering Information
Part Number
FDP054N10
Top Mark
FDP054N10
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VGS = 10 V, ID = 75 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 80 V, ID = 75 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 75 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
-
-
-
-
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 0.41 mH, IAS = 75 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 75 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Typ. Max. Unit
-
0.01
-
-
-
-
-
1
500
±100
V
V/oC
μA
nA
3.5 4.5 V
4.6 5.5 mΩ
192 - S
9985
935
390
156
53
48
13280
1245
585
203
-
-
pF
pF
pF
nC
nC
nC
44 98 ns
92 194 ns
80 170 ns
39 88 ns
- 144 A
- 576 A
- 1.3 V
57 - ns
121 - nC
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
2
www.fairchildsemi.com

2 Page

FDP054N10 equivalent
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
5
www.fairchildsemi.com

5 Page





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