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FDP054N10 Datasheet PDF


FDP054N10 - Fairchild Semiconductor

Part Number FDP054N10
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
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FDP054N10 datasheet
---------------------------------------------
FDP054N10 pdf, equivalent, schematic
Package Marking and Ordering Information
Part Number
FDP054N10
Top Mark
FDP054N10
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VGS = 10 V, ID = 75 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 80 V, ID = 75 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 75 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
-
-
-
-
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 0.41 mH, IAS = 75 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 75 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Typ. Max. Unit
-
0.01
-
-
-
-
-
1
500
±100
V
V/oC
μA
nA
3.5 4.5 V
4.6 5.5 mΩ
192 - S
9985
935
390
156
53
48
13280
1245
585
203
-
-
pF
pF
pF
nC
nC
nC
44 98 ns
92 194 ns
80 170 ns
39 88 ns
- 144 A
- 576 A
- 1.3 V
57 - ns
121 - nC
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
2
www.fairchildsemi.com
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Part NumberDescriptionManufacturers
FDP054N10The function of this parts is a N-Channel PowerTrench MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

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