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AUIRL1404ZS PDF Datasheet - Power MOSFETs - International Rectifier

Part Number AUIRL1404ZS
Description Power MOSFETs
Manufacturers International Rectifier 
Logo International Rectifier Logo 
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Preview ( 15 pages )
		
AUIRL1404ZS datasheet, circuit
PD - 96331
AUTOMOTIVE GRADE
AUIRL1404Z
AUIRL1404ZS
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
AUIRL1404ZL
HEXFET® Power MOSFET
D V(BR)DSS
40V
l 175°C Operating Temperature
RDS(on) typ. 2.5m
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
G
max. 3.1m
ID (Silicon Limited) 180A
l Automotive Qualified *
S ID (Package Limited) 160A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
D
DD
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
DS
G
DS
G
DS
G
TO-220AB
AUIRL1404Z
D2Pak
TO-262
AUIRL1404ZS AUIRL1404ZL
applications.
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient
temperature
(TA)
is
25°C,
unless otherwise
Parameter
specified.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Package Limited)
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
l180
130
160
790
200
Units
A
W
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
1.3
± 16
190
490
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Parameter
RθJC
Junction-to-Case
iRθCS
Case-to-Sink, Flat, Greased Surface
iRθJA Junction-to-Ambient
RθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
Max.
k0.75
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/26/10

1 page

AUIRL1404ZS pdf, schematic
AUIRL1404Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
40 ––– –––
––– 0.034 –––
––– 2.5 3.1
––– ––– 4.7
––– ––– 5.9
1.4 ––– 2.7
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 75A * *
emVGS = 5.0V, ID = 40A
eVGS = 4.5V, ID = 40A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
120 ––– ––– S VDS = 10V, ID = 75A* *
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 75 110
ID = 75A* *
Qgs Gate-to-Source Charge
––– 28 ––– nC VDS = 32V
eQgd
Gate-to-Drain ("Miller") Charge
––– 40 –––
VGS = 5.0V
td(on)
Turn-On Delay Time
––– 19 –––
VDD = 20V
tr Rise Time
––– 180 –––
ID = 75A* *
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 30 ––– ns RG = 4.0
––– 49 –––
VGS = 5.0V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5080 –––
––– 970 –––
––– 570 –––
––– 3310 –––
––– 870 –––
––– 1280 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
MOSFET symbol
D
––– ––– 720
A showing the
integral reverse
G
––– ––– 1.3
ep-n junction diode.
S
V TJ = 25°C, IS = 75A* * , VGS = 0V
––– 26
––– 18
e39 ns TJ = 25°C, IF = 75A* * , VDD = 20V
27 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
∗ ∗Note  through Š , are on page 3
2 www.irf.com

2 Page

AUIRL1404ZS equivalent
AUIRL1404Z/S/L
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 75A
5.0
4.0
VDS= 32V
VDS= 20V
3.0
2.0
1.0
0.0
0
20 40 60
QG Total Gate Charge (nC)
80
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5

5 Page

AUIRL1404ZS diode, scr
AUIRL1404Z/S/L
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD +
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
VDS
VGS
RG
RD
D.U.T.
+-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
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9

9 Page





Information Total 15 Pages
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