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AUIRL1404Z Datasheet PDF


AUIRL1404Z - International Rectifier

Part Number AUIRL1404Z
Description Power MOSFETs
Manufacturers International Rectifier 
Logo International Rectifier Logo 
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AUIRL1404Z datasheet
---------------------------------------------
AUIRL1404Z pdf, equivalent, schematic
AUIRL1404Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
40 ––– –––
––– 0.034 –––
––– 2.5 3.1
––– ––– 4.7
––– ––– 5.9
1.4 ––– 2.7
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 75A * *
emVGS = 5.0V, ID = 40A
eVGS = 4.5V, ID = 40A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
120 ––– ––– S VDS = 10V, ID = 75A* *
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 75 110
ID = 75A* *
Qgs Gate-to-Source Charge
––– 28 ––– nC VDS = 32V
eQgd
Gate-to-Drain ("Miller") Charge
––– 40 –––
VGS = 5.0V
td(on)
Turn-On Delay Time
––– 19 –––
VDD = 20V
tr Rise Time
––– 180 –––
ID = 75A* *
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 30 ––– ns RG = 4.0
––– 49 –––
VGS = 5.0V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5080 –––
––– 970 –––
––– 570 –––
––– 3310 –––
––– 870 –––
––– 1280 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
MOSFET symbol
D
––– ––– 720
A showing the
integral reverse
G
––– ––– 1.3
ep-n junction diode.
S
V TJ = 25°C, IS = 75A* * , VGS = 0V
––– 26
––– 18
e39 ns TJ = 25°C, IF = 75A* * , VDD = 20V
27 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
∗ ∗Note  through Š , are on page 3
2 www.irf.com
---------------------------------------------
AUIRL1404Z transistor, diode fet, igbt, scr
AUIRL1404Z/S/L
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD +
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
VDS
VGS
RG
RD
D.U.T.
+-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
www.irf.com
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