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FDB2532_F085 PDF Datasheet - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

Part Number FDB2532_F085
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
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FDB2532_F085 datasheet, circuit
FDB2532_F085
N-Channel PowerTrench® MOSFET
150V, 79A, 16mΩ
Features
• rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A
• Qg(tot) = 82nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Formerly developmental type 82884
September 2010
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
GATE
DRAIN
(FLANGE)
D
SOURCE
TO-263AB
FDB SERIES
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
ID Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
S
Ratings
150
±20
79
56
8
Figure 4
400
310
2.07
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.48
43
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Fairchild Semiconductor Corporation
FDB2532_F085 Rev. A

1 page

FDB2532_F085 pdf, schematic
Package Marking and Ordering Information
Device Marking
FDB2532
Device
FDB2532_F085
Package
TO-263AB
Reel Size
330mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Tape Width
24mm
Quantity
800 units
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 120V
VGS = 0V
TC = 150oC
VGS = ±20V
150
-
-
-
- -V
-1
μA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 33A, VGS = 10V
ID = 16A, VGS = 6V,
ID = 33A, VGS = 10V,
TC = 175oC
2 - 4V
- 0.014 0.016
-
0.016 0.024
Ω
- 0.040 0.048
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V
ID = 33A
Ig = 1.0mA
Resistive Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 75V, ID = 33A
VGS = 10V, RGS = 3.6Ω
tf
tOFF
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD = 33A
ISD = 16A
ISD = 33A, dISD/dt= 100A/μs
ISD = 33A, dISD/dt= 100A/μs
Notes:
1: Starting TJ = 25°C, L = 0.5 mH, IAS = 40A.
2: Pulse Width = 100s
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5870
615
135
82
11
23
13
19
-
-
-
107
14
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
- 69 ns
16 - ns
30 - ns
39 - ns
17 - ns
- 84 ns
- 1.25 V
- 1.0 V
- 105 ns
- 327 nC
©2010 Fairchild Semiconductor Corporation
FDB2532_F085 Rev. A

2 Page

FDB2532_F085 equivalent
Typical Characteristics TA = 25°C unless otherwise noted
1.4 1.2
VGS = VDS, ID = 250μA
ID = 250μA
1.2
1.1
1.0
0.8
1.0
0.6
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
COSS CDS + CGD
1000
CRSS = CGD
CISS = CGS + CGD
10
VDD = 75V
8
6
4
100
VGS = 0V, f = 1MHz
50
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
150
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 33A
ID = 16A
20 40 60 80
Qg, GATE CHARGE (nC)
100
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2010 Fairchild Semiconductor Corporation
FDB2532_F085 Rev. A

5 Page

FDB2532_F085 diode, scr
SABER Electrical Model
REV April 2002
ttemplate FDB2532 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=6.0e-11,nl=1.09,rs=2.3e-3,trs1=3.0e-3,trs2=1.0e-6,cjo=3.9e-9,m=0.65,tt=4.8e-8,xti=4.2)
dp..model dbreakmod = (rs=0.17,trs1=3.0e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.0e-9,isl=10.0e-30,nl=10,m=0.6)
m..model mmedmod = (type=_n,vto=3.55,kp=10,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.2,kp=145,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.9,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-6.0,voff=-4.0) DPLCAP
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-4.0,voff=-6.0)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.4,voff=1.0) 10
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=1.0,voff=-1.4)
5
RSLC1
LDRAIN
RLDRAIN
c.ca n12 n8 = 1.4e-9
c.cb n15 n14 = 1.6e-9
c.cin n6 n8 = 5.61e-9
RSLC2
51
ISCL
DRAIN
2
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11
spe.eds n14 n8
n7
n5
n17 n18
n8 = 1
=
159
GATE
1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
-
LGATE
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
RLGATE
CIN
50
RDRAIN
16
21
DBREAK
11
MWEAK
MMED
MSTRO
8
EBREAK
+
17
18
-
7
DBODY
LSOURCE
SOURCE
3
i.it n8 n17 = 1
l.lgate n1 n9 = 9.56e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 7.71e-9
res.rlgate n1 n9 = 95.6
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 77.1
S1A
12 13
8
S2A
14
13
15
S1B S2B
CA 13 CB
+ + 14
EGS
6
8
EDS
5
8
--
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
RSOURCE
RLSOURCE
RBREAK
17 18
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.1e-3,tc2=-9.0e-7
res.rdrain n50 n16 = 9.6e-3, tc1=9.0e-3,tc2=3.5e-5
res.rgate n9 n20 = 1.01
res.rslc1 n5 n51 = 1.0e-6, tc1=3.4e-3,tc2=1.5e-6
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 3.0e-3, tc1=4.0e-3,tc2=1.0e-6
res.rvthres n22 n8 = 1, tc1=-4.1e-3,tc2=-1.4e-5
res.rvtemp n18 n19 = 1, tc1=-4.0e-3,tc2=3.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/190))** 3))
}
}
©2010 Fairchild Semiconductor Corporation
FDB2532_F085 Rev. A

9 Page





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FDB2532_F085The function of this parts is a N-Channel PowerTrench MOSFET.Fairchild Semiconductor
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