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FDB2532_F085 Datasheet PDF


FDB2532_F085 - Fairchild Semiconductor

Part Number FDB2532_F085
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
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FDB2532_F085 datasheet
---------------------------------------------
FDB2532_F085 pdf, equivalent, schematic
Package Marking and Ordering Information
Device Marking
FDB2532
Device
FDB2532_F085
Package
TO-263AB
Reel Size
330mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Tape Width
24mm
Quantity
800 units
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 120V
VGS = 0V
TC = 150oC
VGS = ±20V
150
-
-
-
- -V
-1
μA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 33A, VGS = 10V
ID = 16A, VGS = 6V,
ID = 33A, VGS = 10V,
TC = 175oC
2 - 4V
- 0.014 0.016
-
0.016 0.024
Ω
- 0.040 0.048
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V
ID = 33A
Ig = 1.0mA
Resistive Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 75V, ID = 33A
VGS = 10V, RGS = 3.6Ω
tf
tOFF
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD = 33A
ISD = 16A
ISD = 33A, dISD/dt= 100A/μs
ISD = 33A, dISD/dt= 100A/μs
Notes:
1: Starting TJ = 25°C, L = 0.5 mH, IAS = 40A.
2: Pulse Width = 100s
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5870
615
135
82
11
23
13
19
-
-
-
107
14
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
- 69 ns
16 - ns
30 - ns
39 - ns
17 - ns
- 84 ns
- 1.25 V
- 1.0 V
- 105 ns
- 327 nC
©2010 Fairchild Semiconductor Corporation
FDB2532_F085 Rev. A
---------------------------------------------
FDB2532_F085 transistor, diode fet, igbt, scr
SABER Electrical Model
REV April 2002
ttemplate FDB2532 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=6.0e-11,nl=1.09,rs=2.3e-3,trs1=3.0e-3,trs2=1.0e-6,cjo=3.9e-9,m=0.65,tt=4.8e-8,xti=4.2)
dp..model dbreakmod = (rs=0.17,trs1=3.0e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.0e-9,isl=10.0e-30,nl=10,m=0.6)
m..model mmedmod = (type=_n,vto=3.55,kp=10,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.2,kp=145,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.9,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-6.0,voff=-4.0) DPLCAP
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-4.0,voff=-6.0)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.4,voff=1.0) 10
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=1.0,voff=-1.4)
5
RSLC1
LDRAIN
RLDRAIN
c.ca n12 n8 = 1.4e-9
c.cb n15 n14 = 1.6e-9
c.cin n6 n8 = 5.61e-9
RSLC2
51
ISCL
DRAIN
2
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11
spe.eds n14 n8
n7
n5
n17 n18
n8 = 1
=
159
GATE
1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
-
LGATE
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
RLGATE
CIN
50
RDRAIN
16
21
DBREAK
11
MWEAK
MMED
MSTRO
8
EBREAK
+
17
18
-
7
DBODY
LSOURCE
SOURCE
3
i.it n8 n17 = 1
l.lgate n1 n9 = 9.56e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 7.71e-9
res.rlgate n1 n9 = 95.6
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 77.1
S1A
12 13
8
S2A
14
13
15
S1B S2B
CA 13 CB
+ + 14
EGS
6
8
EDS
5
8
--
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
RSOURCE
RLSOURCE
RBREAK
17 18
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.1e-3,tc2=-9.0e-7
res.rdrain n50 n16 = 9.6e-3, tc1=9.0e-3,tc2=3.5e-5
res.rgate n9 n20 = 1.01
res.rslc1 n5 n51 = 1.0e-6, tc1=3.4e-3,tc2=1.5e-6
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 3.0e-3, tc1=4.0e-3,tc2=1.0e-6
res.rvthres n22 n8 = 1, tc1=-4.1e-3,tc2=-1.4e-5
res.rvtemp n18 n19 = 1, tc1=-4.0e-3,tc2=3.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/190))** 3))
}
}
©2010 Fairchild Semiconductor Corporation
FDB2532_F085 Rev. A





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Part NumberDescriptionManufacturers
FDB2532_F085The function of this parts is a N-Channel PowerTrench MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

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