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What is IRF1407LPbF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFETs".


IRF1407LPbF Datasheet PDF - International Rectifier

Part Number IRF1407LPbF
Description Power MOSFETs
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD -95486
IRF1407SPbF
Benefits
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10Vˆ
Continuous Drain Current, VGS @ 10Vˆ
Pulsed Drain Current ˆ
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚ˆ
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒˆ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
IRF1407LPbF
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0078
ID = 100A†
S
D2Pak
IRF1407S
TO-262
IRF1407L
Max.
100†
70†
520
3.8
200
1.3
± 20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
www.irf.com
1
06/30/04

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IRF1407LPbF equivalent
IRF1407S/LPbF
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25 50 75 100 125 150 175
TC, Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
IRF1407LPbFThe function is Power MOSFET ( Transistor ). InfineonInfineon
IRF1407LPbFThe function is Power MOSFETs. International RectifierInternational Rectifier

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