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AUIRFB4410 Datasheet PDF


AUIRFB4410 - International Rectifier

Part Number AUIRFB4410
Description Power MOSFETs
Manufacturers International Rectifier 
Logo International Rectifier Logo 
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AUIRFB4410 datasheet
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AUIRFB4410 pdf, equivalent, schematic
AUIRFB4410
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– –––
––– 0.094 –––
––– 8.0 10
2.0 ––– 4.0
120 ––– –––
––– 1.5 –––
V VGS = 0V, ID = 250µA
dV/°C Reference to 25°C, ID = 1mA
gmVGS = 10V, ID = 58A
V VDS = VGS, ID = 150µA
S VDS = 50V, ID = 58A
f = 1MHz, open drain
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 120 180
Qgs Gate-to-Source Charge
––– 31 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 44 –––
td(on)
Turn-On Delay Time
––– 24 –––
tr Rise Time
––– 80 –––
td(off)
Turn-Off Delay Time
––– 55 –––
tf Fall Time
––– 50 –––
Ciss Input Capacitance
––– 5150 –––
Coss Output Capacitance
––– 360 –––
Crss Reverse Transfer Capacitance
––– 190 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 420 –––
hCoss eff. (TR) Effective Output Capacitance (Time Related) ––– 500 –––
Diode Characteristics
nC ID = 58A
gVDS = 80V
VGS = 10V
ns VDD = 65V
ID = 58A
gRG = 4.1
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
iVGS = 0V, VDS = 0V to 80V , See Fig.11
hVGS = 0V, VDS = 0V to 80V , See Fig. 5
Symbol
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
™––– ––– 88
A MOSFET symbol
D
(Body Diode)
showing the
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– ––– 380 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 58A, VGS = 0V
S
––– 38 56 ns TJ = 25°C
VR = 85V,
––– 51 77
TJ = 125°C
––– 61 92 nC TJ = 25°C
gIF = 58A
di/dt = 100A/µs
––– 110 170
TJ = 125°C
––– 2.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.14mH
RG = 25, IAS = 58A, VGS =10V. Part not recommended for use
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‰ Rθ is measured at TJ approximately 90°C.
above this value.
„ ISD 58A, di/dt 650A/µs, VDD V(BR)DSS, TJ 175°C.
… Pulse width 400µs; duty cycle 2%.
2 www.irf.com
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AUIRFB4410 transistor, diode fet, igbt, scr
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
AUIRFB4410
TO-220AB Part Marking Information
Part Number
IR Logo
AUIRFB4410
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
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