DataSheet39.com

FQA32N20C PDF Datasheet - N-Channel QFET MOSFET - Fairchild Semiconductor

Part Number FQA32N20C
Description N-Channel QFET MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
Preview
Preview ( 8 pages )
		
FQA32N20C datasheet, circuit
FQA32N20C
N-Channel QFET® MOSFET
200 V, 32 A, 82 mΩ
May 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 32 A, 200 V, RDS(on) = 82 m(Max.) @ VGS = 10 V,
ID = 16 A
• Low Gate Charge (Typ. 82.5 nC)
• Low Crss (Typ. 185 pF)
• 100% Avalanche Tested
D
G
DS
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQA32N20C
200
32
20.4
128
± 30
955
32
20.4
5.5
204
1.63
-55 to +150
300
FQA32N20C
0.61
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C2
1
www.fairchildsemi.com

1 page

FQA32N20C pdf, schematic
Package Marking and Ordering Information
Part Number
FQA32N20C
Top Mark
FQA32N20C
Package
TO-3PN
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.24
IDSS Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 16 A
VDS = 40 V, ID = 16 A
2.0 --
4.0
-- 0.068 0.082
-- 20
--
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1700 2220
-- 400 520
-- 185 245
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 100 V, ID = 32 A,
RG = 25
VDS = 160 V, ID = 32 A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
25
270
245
210
82.5
10.5
44.5
60
550
500
430
110
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 32 A
trr Reverse Recovery Time
VGS = 0 V, IS = 32 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 1.4 mH, IAS = 32 A, VDD = 50 V, RG = 25 , starting TJ = 25oC.
3. ISD 32 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
-- -- 32
-- -- 128
-- -- 1.5
-- 265
--
-- 2.73
--
A
A
V
ns
µC
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C2
2
www.fairchildsemi.com

2 Page

FQA32N20C equivalent
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
V1G0GVSS
tp
DUT
VDD VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C2
5
www.fairchildsemi.com

5 Page





Information Total 8 Pages
Download[ FQA32N20C.PDF Datasheet ]

Share Link :

Electronic Components Distributor

SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Element14 Chip One Stop



Featured Datasheets

Part NumberDescriptionManufacturers
FQA32N20CThe function of this parts is a N-Channel QFET MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

Quick jump to:

FQA3  1N4  2N2  2SA  2SC  74H  ADC  BC  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 


DataSheet39.com is an Online Datasheet PDF Search Site.
It offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.



Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  SCR

www.DataSheet39.com    |   2017   |  Contact Us   |  New  |  Search