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FDB9406_F085 Datasheet PDF


FDB9406_F085 - Fairchild Semiconductor

Part Number FDB9406_F085
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
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FDB9406_F085 datasheet
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FDB9406_F085 pdf, equivalent, schematic
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min.
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=40V, TJ = 25oC
VGS = 0V
TJ = 175oC(Note 4)
VGS = ±20V
40
-
-
-
VGS(th)
RDS(on)
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A,
TJ = 25oC
VGS= 10V TJ = 175oC(Note 4)
2.0
-
-
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 32V
ID = 80A
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.83
1.31
2.2
7710
2015
140
2.7
107
14
33
18
Max. Units
-
1
1
±100
V
μA
mA
nA
4.0 V
1.8 mΩ
2.8 mΩ
- pF
- pF
- pF
-Ω
138 nC
19 nC
- nC
- nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 20V, ID = 80A,
VGS = 10V, RGEN = 6Ω
--
- 32
- 81
- 50
- 23
--
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD = 80A, VGS = 0V
IF = 80A, dISD/dt = 100A/μs,
VDD=32V
--
- 85
- 122
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
160
-
-
-
-
93
1.25
110
160
ns
ns
ns
ns
ns
ns
V
ns
nC
FDB9406_F085 Rev. C3
2
www.fairchildsemi.com
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Featured Datasheets

Part NumberDescriptionManufacturers
FDB9406_F085The function of this parts is a N-Channel PowerTrench MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

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