DataSheet39.com

FDB9406_F085 PDF Datasheet - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

Part Number FDB9406_F085
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
Preview
Preview ( 6 pages )
		
FDB9406_F085 datasheet, circuit
June 2014
FDB9406_F085
N-Channel PowerTrench® MOSFET
40 V, 110 A, 1.8 mΩ
Features
„ Typ RDS(on) = 1.31mΩ at VGS = 10V, ID = 80A
„ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
DD
GS
TO-263
FDB SERIES
G
S
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/Alternator
„ Distributed Power Architectures and VRM
„ Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild 
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
110
See Figure4
174
176
1.18
-55 to + 175
0.85
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDB9406
FDB9406_F085 D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
2:
3:
mrRSatθotaiJnurAtgnintiipsgnrgteThsJseeu=snruft2aem5cd°eCohfoe, tfrLheteh=isej0ubd.n0arc4asti5ieonmdnp-Hotionn,-sIcmA.aSosRu=eθn8aJtCi8nnAdgis,coVagnsDueaDa-r1t=aoni-4nat0e2mVepbdadiedbunyroitnfdtgh2eeosinrzimgdcnuaoclwptrophereislceris.htRaarnθgJciAenigswahdneedrteeVrtmDhDeinc=ead0sVbeytdhtuhererinmugastleimrre'sefebirneonaacrvdealdiasendsceihgfenin..edThaes
the solder
maximum
©2014 Fairchild Semiconductor Corporation
FDB9406_F085 Rev. C3
1
www.fairchildsemi.com

1 page

FDB9406_F085 pdf, schematic
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min.
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=40V, TJ = 25oC
VGS = 0V
TJ = 175oC(Note 4)
VGS = ±20V
40
-
-
-
VGS(th)
RDS(on)
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A,
TJ = 25oC
VGS= 10V TJ = 175oC(Note 4)
2.0
-
-
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 32V
ID = 80A
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.83
1.31
2.2
7710
2015
140
2.7
107
14
33
18
Max. Units
-
1
1
±100
V
μA
mA
nA
4.0 V
1.8 mΩ
2.8 mΩ
- pF
- pF
- pF
-Ω
138 nC
19 nC
- nC
- nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 20V, ID = 80A,
VGS = 10V, RGEN = 6Ω
--
- 32
- 81
- 50
- 23
--
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD = 80A, VGS = 0V
IF = 80A, dISD/dt = 100A/μs,
VDD=32V
--
- 85
- 122
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
160
-
-
-
-
93
1.25
110
160
ns
ns
ns
ns
ns
ns
V
ns
nC
FDB9406_F085 Rev. C3
2
www.fairchildsemi.com

2 Page

FDB9406_F085 equivalent
Typical Characteristics
20
ID = 80A
16
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
12
TJ = 25oC
8
TJ = 175oC
4
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
10
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized RDSON vs. Junction
Temperature
1.2
VGS = VDS
1.0 ID = 250μA
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
1.2
ID = 1mA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
1000
100
Ciss
Coss
f = 1MHz
VGS = 0V
Crss
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs. Drain to Source
Voltage
10
ID = 80A
VDD = 16V
8
VDD = 20V
VDD = 24V
6
4
2
0
0 20 40 60 80 100 120
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
FDB9406_F085 Rev. C3
5
www.fairchildsemi.com

5 Page





Information Total 6 Pages
Download[ FDB9406_F085.PDF Datasheet ]

Share Link :

Electronic Components Distributor

SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Element14 Chip One Stop



Featured Datasheets

Part NumberDescriptionManufacturers
FDB9406_F085The function of this parts is a N-Channel PowerTrench MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

Quick jump to:

FDB9  1N4  2N2  2SA  2SC  74H  ADC  BC  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 


DataSheet39.com is an Online Datasheet PDF Search Site.
It offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.



Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  SCR

www.DataSheet39.com    |   2017   |  Contact Us   |  New  |  Search