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FDP053N08B Datasheet PDF


FDP053N08B - Fairchild Semiconductor

Part Number FDP053N08B
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 
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FDP053N08B datasheet
---------------------------------------------
FDP053N08B pdf, equivalent, schematic
Package Marking and Ordering Information
Part Number
FDP053N08B_F102
Top Mark
FDP053N08B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 64 V, VGS = 0 V
VDS = 64 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgd
Vplateau
Qsync
Qoss
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
Total Gate Charge Sync.
Output Charge
Equivalent Series Resistance (G-S)
VDS = 40 V, VGS = 0 V,
f = 1 MHz
VDS = 40 V, VGS = 0 V
VDS = 40 V, ID = 75 A,
VGS = 10 V
VDS = 0 V, ID = 37.5 A
VDS = 40 V, VGS = 0 V
f = 1 MHz
(Note 4)
Min.
80
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.089
-
-
-
-
4.2
100
4480
740
20.5
1333
65.4
26.7
15.3
6.0
52.4
64.2
1.2
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 40 V, ID = 75 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDD = 40 V, ISD = 75 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 15.6 A, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
32
30
44
16
-
-
-
59.3
62.5
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.5 V
5.3 mΩ
-S
5960
985
-
-
85
-
-
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
V
nC
nC
Ω
74 ns
70 ns
98 ns
42 ns
120*
480
1.3
-
-
A
A
V
ns
nC
©2012 Fairchild Semiconductor Corporation
FDP053N08B Rev. C3
2
www.fairchildsemi.com
---------------------------------------------
FDP053N08B transistor, diode fet, igbt, scr
Mechanical Dimensions
Figure 19. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3
©2012 Fairchild Semiconductor Corporation
FDP053N08B Rev. C3
9
www.fairchildsemi.com





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Part NumberDescriptionManufacturers
FDP053N08BThe function of this parts is a N-Channel PowerTrench MOSFET.Fairchild Semiconductor
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