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9R340C Datasheet PDF - Infineon

Part Number 9R340C
Description IPB90R340C3
Manufacturers Infineon 
Logo Infineon Logo 

Preview ( 10 pages )
		
9R340C datasheet, circuit
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for industrial applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
VDS @ TJ=25°C
RDS(on),max @TJ=25°C
Qg,typ
IPB90R340C3
900 V
0.34 W
94 nC
PG-TO263
CoolMOS900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• SMPS
• PC Silverbox
• Lighting
• Solar
Type
IPB90R340C3
Package
PG-TO263
Marking
9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current 2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
Avalanche energy, repetitive t AR 2),3) E AR
Avalanche current, repetitive t AR 2),3) I AR
I D=3.1 A, V DD=50 V
I D=3.1 A, V DD=50 V
MOSFET dv /dt ruggedness
dv /dt V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Rev. 2.0
page 1
Value
15
9.5
34
678
1
3.1
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2012-04-16

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9R340C equivalent
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
25
20
15
10
5
IPB90R340C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T J=150 °C
parameter: V GS
5
20 V
10 V
8V
6V
5V
4.5 V
4V
4
3
10 V
2
5V
4.8 V
1
4.5 V
4V
0
0 5 10 15
VDS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=9.2 A; V GS=10 V
20
1
0.8
0
25 0 5 10 15 20 25 30
ID [A]
8 Typ. transfer characteristics
I D=f(V GS); V DS=20V
parameter: T J
50
25 °C
40
0.6 30
98 %
typ
0.4 20
150 °C
0.2 10
0
-60 -20 20 60 100 140 180
TJ [°C]
0
0 2 4 6 8 10
VGS [V]
Rev. 2.0
page 5
2012-04-16

5 Page
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Information Total 10 Pages
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Part NumberDescriptionManufacturers
9R340CThe function is IPB90R340C3.Infineon
Infineon

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