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PDTC114EE Datasheet PDF - Philips

Part Number PDTC114EE
Description NPN resistor-equipped transistor
Manufacturers Philips 
Logo Philips Logo 



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PDTC114EE datasheet, circuit
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114E series
NPN resistor-equipped transistor;
R1 = 10 k, R2 = 10 k
Product specification
Supersedes data of 2003 Apr 10
2004 Aug 05

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PDTC114EE equivalent
Philips Semiconductors
NPN resistor-equipped transistor;
R1 = 10 k, R2 = 10 k
Product specification
PDTC114E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0
VCE = 30 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 µA; VCE = 5 V
IC = 10 mA; VCE = 0.3 V
RR-----21-- resistor ratio
Cc collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
MIN.
30
2.5
7
TYP.
1.1
1.8
10
MAX.
100
1
50
400
150
0.8
13
UNIT
nA
µA
µA
µA
mV
V
V
k
0.8 1
1.2
− − 2.5 pF
2004 Aug 05
5

5 Page
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Information Total 14 Pages
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