C30659-900-R8AH Datasheet PDF - Excelitas
Part Number | C30659-900-R8AH | |
Description | Si and InGaAs APD Preamplifier Modules | |
Manufacturers | Excelitas | |
Logo | ||
There is a preview and C30659-900-R8AH download ( pdf file ) link at the bottom of this page. Total 10 Pages |
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Photon Detection
C30659 Series – 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold
and greater resilience when exposed to higher optical power densities.
Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode
(APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to
allow for ultra-low noise operation.
The Si APDs used in these devices are the same as used in Excelitas’ C30817EH,
C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in
the C30645EH and C30662EH products. These detectors provide very good response
between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The
preamplifier section of the module uses a very low noise GaAs FET front end
designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.
The C30659 is pin-to-pin compatible with the C30950 Series with a negative output.
An emitter follower is used as an output buffer stage. To obtain the wideband
characteristics, the output of these devices should be capacitively- or AC-coupled to
a 50 Ω termination. The module must not be DC-coupled to loads of less than 2,000
Ohms. For field use, it is recommended that a temperature-compensated HV supply
be employed to maintain a constant responsivity over temperature.
Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak
response, are designed to exhibit higher damage thresholds, thus providing
greater resilience when exposed to high optical power densities.
Customization of the C30659 Series of APD Preamplifier Modules is available
to meet your specific design challenges; modifications include bandwidth and gain
optimization, use of different APDs, FC-connectorized packaging.
www.excelitas.com
C30659 Series-Rev.1.1-2013.06 Page 1 of 10
Key Features
System bandwidths of 50 MHz
and 200MHz
Ultra low noise equivalent
power (NEP)
Spectral response range:
– With Si APD: 400 to 1100 nm
– With InGaAs APD: 1100 to
1700 nm
Typical power consumption: 150 mW
±5 V amplifier operating voltages
50 Ω AC load capability (AC-Coupled)
Hermetically-sealed TO-8 package
High reliability
Fast overload recovery
Pin-to-pin compatible with the
C30950 Series
Light entry angle, over 130°
Model 1550E exhibits enhanced
damage threshold
RoHS-compliant
Applications
Range finding
LIDAR
Confocal microscopy
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C30659 Series – 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Table 4. Absolute – Maximum Ratings, Limiting Values
Detector type
C30659-900-
R8AH
(Silicon APD)
C30659-900-
R5BH
(Silicon APD)
C30659-1060
Models
(Silicon APD)
C30659-1550
Models
(InGaAs APD)
C30659-1550E
Models
(InGaAs APD)
Parameter
Min Max Min Max Min Max Min Max Min Max
Photodiode bias voltage (Note 1)
at TA = +70˚C
at TA = -40˚C
600 350
600
100
100
300 210
300
50
50
Incident radiant flux, ΦM, (Note 2)
average (Note 3)
0.1 0.1
0.1
2
2
peak (Note 4)
50 50
50
peak (Note 5)
4 1000
Case temperature
storage, Tstg
operating, TA
-50 100 -50 100 -50 100 -50 100 -50 100
-40 70 -40 70
-40
70
-40
70
-40
70
Preamplifier bias voltage
±4.5 ±5.5 ±4.5 ±5.5 ±4.5 ±5.5 ±4.5 ±5.5 ±4.5 ±5.5
Notes:
1.
2.
3.
4.
5.
The operating voltage (Vop) must remain below the breakdown voltage (Vbr), these values are worst-case estimates.
As demonstrated in laboratory conditions.
Based on 0.5 W electrical power on the high voltage (HV) supply.
Test with 50 ns pulse width.
Tested at 1060 nm, 10 ns pulse width and 1 kHz pulse repetition rate.
Units
V
V
mW
mW
kW/cm²
˚C
˚C
V
Figure 1. Schematic Block Diagram − C30659 Series
www.excelitas.com
Page 5 of 10
C30659 Series-Rev.1.1-2013.06
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