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PDF AUIRFBA1405 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFBA1405 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
PD-97768
AUIRFBA1405
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) typ.
4.3m
max
5.0m
hG
ID (Silicon Limited)
174A
S ID (Package Limited)
95A
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
D
G
Gate
DS
G
Super-220
AUIRFBA1405
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÃAvalanche Current
iRepetitive Avalanche Energy
ePeak Diode recovery dv/dt
TJ Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
jRJC Junction-to-Case
RCS Case-to-Sink, Flat, Greased Surface
RJA Junction-to-Ambient
Max.
174h
123h
95
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
Typ.
–––
0.50
–––
Max.
0.45
–––
58
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/15/12
1 page  
AUIRFBA1405
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
20 ID = 101A
16
VVDDSS
=
=
44V
27V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 60 120 180 240 300
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 175° C
100
TJ = 25° C
10
1 VGS = 0 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100 100us
1ms
10 10ms
TC
TJ
=
=
25 ° C
175° C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRFBA1405
Ordering Information
Base part
number
Package Type
AUIRFBA1405
Super-220
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRFBA1405
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFBA1405.PDF ] | |
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