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What is AUIRF7737L2TR?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


AUIRF7737L2TR Datasheet PDF - International Rectifier

Part Number AUIRF7737L2TR
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD - 96315C
AUIRF7737L2TR
AUTOMOTIVE GRADE AUIRF7737L2TR1
Automotive DirectFET® Power MOSFET ‚
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
SS S
D
G
SS S
D
40V
1.5m
1.9m
156A
89nC
Applicable DirectFET® Outline and Substrate Outline 
SB SC
M2
M4
L6 DirectFET® ISOMETRIC
L4 L6 L8
Description
The AUIRF7737L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7737L2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
40
± 20
156
110
31
315
624
83
3.3
104
386
See Fig.18a, 18b, 16, 17
V
A
W
mJ
A
mJ
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
270
-55 to + 175
°C
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
fLinear Derating Factor
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.8
0.5
0.56
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
11/08/10

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AUIRF7737L2TR equivalent
AUIRF7737L2TR/TR1
5.5 1000
TJ = -40°C
TJ = 25°C
4.5 TJ = 175°C
100
3.5
ID = 1.0A
ID = 1.0mA
2.5 ID = 250µA
ID = 150µA
10
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
300
250
TJ = 25°C
200
150
TJ = 175°C
100
VDS = 10V
50 380µs PULSE WIDTH
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
0 20 40 60 80 100 120 140 160
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance Vs. Drain Current
14
12
ID= 94A
VDS= 32V
VDS= 20V
VDS= 8V
10
8
6
4
2
0
0 25 50 75 100 125
QG, Total Gate Charge (nC)
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
160
140
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
Fig 12. Maximum Drain Current vs. Case Temperature
5


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AUIRF7737L2TRThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier
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