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PDF MRF8P23160WHR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8P23160WHR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Document Number: MRF8P23160WH
Rev. 0, 12/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 2300 to 2400 MHz.
• CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeolt@s,
0.01% Probability on CCDF.
Frequency
2300 MHz
2350 MHz
2400 MHz
Gps
(dB)
13.9
14.1
13.8
ηD Output PAR ACPR
(%)
(dB)
(dBc)
37.1 7.9 --31.0
38.3 7.7 --32.2
38.3 7.4 --33.1
MRF8P23160WHR3
MRF8P23160WHSR3
2300--2400 MHz, 30 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 30 Vdc, 2350 MHz, 144 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 190 Watts (2)
Features
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 100 MHz Signal Bandwidth
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
CASE 465M--01, STYLE 1
NI--780--4
MRF8P23160WHR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23160WHSR3
RFinA/VGSA 3
RFinB/VGSB 4
1 RFoutA/VDSA
2 RFoutB/VDSB
(Top View)
Table 1. Maximum Ratings
Figure 1. Pin Connections
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (3,4)
CW Operation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
129
0.48
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P23160WHR3 MRF8P23160WHSR3
1
1 page  
TYPICAL CHARACTERISTICS
15
14.8
VDD = 28 Vdc, Pout = 30 W (Avg.), IDQA = 600 mA
VGSB = 1.2 Vdc, Single--Carrier W--CDMA
14.6
ηD
41
39
37
14.4 35
14.2 Gps 33
14 ACPR
13.8
--30
--30.4
--2
--2.2
13.6
PARC
--30.8
13.4 3.84 MHz Channel Bandwidth
--31.2
13.2
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
13
--31.6
--32
2290 2305 2320 2335 2350 2365 2380 2395 2410
--2.4
--2.6
--2.8
--3
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 30 Watts Avg.
--20
IM3--U
--30 IM3--L
--40 IM5--L
--50
IM7--L
IM7--U IM5--U
--60
VDD = 28 Vdc, Pout = 28 W (PEP)
IDQA = 600 mA, VGSB = 1.2 Vdc
Two--Tone Measurements
--70 (f1 + f2)/2 = Center Frequency of 2350 MHz
1 10
100 300
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
15
1
VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc, f = 2350 MHz
60
--23
14.5
0
Single--Carrier W--CDMA, 3.84 MHz, Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
50
--25
14 --1
Gps
13.5 --2
ηD
ACPR
--1 dB = 15 W
13 --3
12.5 --4
--2 dB = 24.5 W
PARC
40 --27
30 --29
20 --31
10 --33
12 --5
--3 dB = 36 W
0 --35
10 20 30 40 50 60
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
RF Device Data
Freescale Semiconductor, Inc.
MRF8P23160WHR3 MRF8P23160WHSR3
5
5 Page 
RF Device Data
Freescale Semiconductor, Inc.
MRF8P23160WHR3 MRF8P23160WHSR3
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MRF8P23160WHR3.PDF ] | |
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