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Datasheet SUD50N025-05P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SUD50N025-05P | N-Channel 25-V (D-S) MOSFET New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
ID (A)a, e
89 80
Qg (Typ)
30 nC
TO-252
FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant
APPLICATIONS D DC/DC Conversion | Vishay | mosfet |
SUD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SUD-40150CB00 | Ultrasonic Sensor
MITSUMI
Ultrasonic Sensor
SUD-40165CB00•SUD-40150CB00
OUTLINE
The piezoelectrical effect of piezoelectric ceramic is used in this ultrasonic sensor for detecting the 40kHz- wavelength of acoustic energy.
FEATURES
1. Small size, light weight. 2. Size can be between 15-20mm i Mitsumi sensor | | |
2 | SUD-40165CB00 | Ultrasonic Sensor
MITSUMI
Ultrasonic Sensor
SUD-40165CB00•SUD-40150CB00
OUTLINE
The piezoelectrical effect of piezoelectric ceramic is used in this ultrasonic sensor for detecting the 40kHz- wavelength of acoustic energy.
FEATURES
1. Small size, light weight. 2. Size can be between 15-20mm i Mitsumi sensor | | |
3 | SUD06N10-225L | N-Channel 100-V (D-S) 175C MOSFET www.DataSheet.co.kr
SUD06N10-225L
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.200 @ VGS = 10 V 0.225 @ VGS = 4.5 V
ID (A)
6.5 6.0
D
TO-252
G Drain Connected to Tab G D S
Top View Order Number: SUD06N10-225L S N-Channel MOSFET
AB Vishay Siliconix mosfet | | |
4 | SUD06N10-225L-GE3 | N-Channel 100V (D-S) MOSFET SUD06N10-225L-GE3
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.200 at VGS = 10 V 0.225 at VGS = 4.5 V
ID (A) 6.5 6
TO-252
Qg (Typ) 2.7
FEATURES • TrenchFET® Power MOSFETs • Material categorization:
For definitions of compliance please see www. Vishay Siliconix mosfet | | |
5 | SUD08P06-155L | P-Channel 60-V (D-S) 175C MOSFET data | | |
6 | SUD08P06-155L | P-Channel 60-V (D-S) 175C MOSFET www.DataSheet.co.kr
SUD08P06-155L
New Product
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
−60
rDS(on) (W)
0.155 @ VGS = −10 V 0.280 @ VGS = −4.5 V
ID (A)
−8.4 −7.4
Qg (Typ)
12 5 12.5
D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Te Vishay Siliconix mosfet | | |
7 | SUD10P06-280L | P-Channel MOSFET www.DataSheet4U.net
SUD/SUU10P06-280L
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
VDS (V)
–60
rDS(on) (W)
0.170 @ VGS = –10 V 0.280 @ VGS = –4.5 V
ID (A)
–10 –8
TO-251
S
TO-252
G
Drain Connected to Tab G D S G D S
and DRAIN-TAB
Top View Order Vishay Siliconix mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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