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PDF SVF20N60PN Data sheet ( Hoja de datos )
| Número de pieza | SVF20N60PN | |
| Descripción | 20A 600V N-CHANNEL MOSFET | |
| Fabricantes | SILAN MICROELECTRONICS | |
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SVF20N60F/PN_Datasheet
20A 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF20N60F/PN is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 20A, 600V, RDS(on(typ)=0.28Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF20N60F
SVF20N60PN
Package
TO-220F-3L
TO-3PN
Marking
SVF20N60F
20N60
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.11.15
Page 1 of 8
1 page  
Silan
Microelectronics
SVF20N60F/PN_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100 -50 0
Notes:
1. VGS=0V
2. ID=250µA
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
Area(SVF20N60F)
102
100µs
1ms
101
10ms
DC
100 Operation in This Area
is Limited by RDS(ON)
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
20
16
12
8
4
0
25 50 75 100 125 150
Case Temperature – TC(°C)
Figure 8. On-resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0
Notes:
1. VGS=10V
2. ID=10.0A
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
Area(SVF20N60PN)
102
100µs
1ms
101 10ms
DC
100
Operation in This Area
is Limited by RDS(ON)
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.11.15
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SVF20N60PN.PDF ] | |
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