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PDF AOI442 Data sheet ( Hoja de datos )
| Número de pieza | AOI442 | |
| Descripción | 60V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AOI442 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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AOD442/AOI442
60V N-Channel MOSFET
General Description
Product Summary
The AOD442/AOI442 used advanced trench technology to
provide excellent RDS(ON) and low gate charge. Those
devices are suitable for use as a load switch or in PWM
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
60V
37A
< 20mΩ
< 25mΩ
Top View
D
TO252
DPAK
Bottom View
D
Top View
TO-251A
IPAK
Bottom View
D
D
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
37
26
60
7
5
30
45
60
30
2.1
1.3
-55 to 175
G
D
S
G
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
51
1.8
Max
25
60
2.5
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Aug 2009
www.aosmd.com
Page 1 of 6
1 page  
AOD442/AOI442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 TA=25°C
TA=150°C
10
TA=100°C
80
60
40
TA=125°C
20
37A
1
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
50 10000
TA=25°C
40 1000
30 17
100 5
20
2
10
10
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=60°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0 : Aug 2009
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOI442.PDF ] | |
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