DataSheet39.com

60N321 Datasheet PDF - Toshiba Semiconductor

Part Number 60N321
Description GT60N321
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 

Preview ( 6 pages )
		
60N321 datasheet, circuit
GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications
Fourth Generation IGBT
Unit: mm
FRD included between emitter and collector
Enhancement mode type
High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = 20 A/μs)
Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Emitter-Collector
Forward Current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES
VGES
IC
ICP
IECF
IECFP
PC
Tj
Tstg
1000
±25
60
120
15
120
170
150
55 to 150
0.8
V
V
A
A
W
°C
°C
Nm
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
Gate
Emitter
TOSHIBA
GT60N321
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2010-01-07

No Preview Available !


1 page
line_dark_gray
60N321 equivalent
103 Rth (t) – tw
Tc = 25°C
102
101
100
101
Diode Stage
IGBT Stage
102
101305
104
103
102
101
100
101
102
Pulse width tw (s)
Irr, trr – IECF
10 2
Common emitter
di/dt = −20 A/μs
9
Tc = 25°C
1.6
8 1.2
trr
Irr
7 0.8
6 0.4
50
0 20 40 60 80 100
Emitter-collector forward current IECF (A)
GT60N321
100
Common
コレcollector
80
IECF – VECF
60
40
20
0
0.0
Tc = 125°C
0.5 1.0
40
25
1.5
2.0
2.5
Collector-emitter forward voltage VECF (V)
Irr, trr – di/dt
50 1
trr
40
Common emitter
IECF = 60 A
Tc = 25°C
0.8
30 0.6
20 0.4
10 0.2
00
0 50 100 150 200 250
di/dt (A/μs)
5 2010-01-07

5 Page
line_dark_gray


Information Total 6 Pages
Download[ 60N321.PDF Datasheet ]

Share Link :

Electronic Components Distributor

SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Element14 Chip One Stop



Featured Datasheets

Part NumberDescriptionManufacturers
60N321The function is GT60N321.Toshiba Semiconductor
Toshiba Semiconductor

Quick jump to:

60N3  1N4  2N2  2SA  2SC  74H  ADC  BC  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 


DataSheet39.com is an Online Datasheet PDF Search Site.
It offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.



keyword : 60N321 schematic, 60N321 equivalent, 60N321 pinout

DataSheet39.com   |  2018   |  Privacy Policy |  Contact Us  | New  |  Search