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What is IRL2203NLPbF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRL2203NLPbF Datasheet PDF - International Rectifier

Part Number IRL2203NLPbF
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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Total 10 Pages



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No Preview Available ! IRL2203NLPbF datasheet, circuit

PD - 95219A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l 100% RG Tested
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
IRL2203NSPbF
IRL2203NLPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 7.0m
ID = 116A‡
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
TO-262
IRL2203NSPbF IRL2203NLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
VGS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max
i116
82
400
3.8
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RθJC
RθJA
k Parameter
Junction-to-Case
jkJunction-to-Ambient (PCB mount, steady state)
www.irf.com
Typ
–––
–––
Max
0.85
40
Units
°C/W
1
10/01/10

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IRL2203NLPbF equivalent
IRL2203NS/LPbF
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
D = 0.50
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRL2203NLPbF electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IRL2203NLPbFThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier

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