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PDF K4021 Data sheet ( Hoja de datos )
| Número de pieza | K4021 | |
| Descripción | MOSFET ( Transistor ) - 2SK4021 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K4021 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK4021
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4021
Switching Regulators and DC-DC Converter Applications
Motor Drive Applications
z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.)
z High forward transfer admittance: |Yfs| = 4.5 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 250 V)
z Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
0.9
Unit: mm
0.6 MAX.
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
2.3 2.3
Drain−source voltage
VDSS 250 V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
250
V
123
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
VGSS
ID
IDP
PD
EAS
±20 V
4.5 A
18 A
20 W
51 mJ
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
4.5
2.0
150
−55 to 150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-7J2B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29
1 page  
2SK4021
www.DataSheet4U.com
Safe operating area
100
ID max (pulsed) *
10
ID max (continuous)
1 ms *
1
100 μs *
0.1 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1 10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS – Tch
80
60
40
20
0
25 50 75 100 125
Channel temperature (initial) Tch (°C)
150
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG =25 Ω
VDD = 50 V, L = 4.28mH
Waveform
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K4021.PDF ] | |
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