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What is EMB06N03H?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "N-Channel Logic Level Enhancement Mode Field Effect Transistor".


EMB06N03H Datasheet PDF - Excelliance MOS

Part Number EMB06N03H
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 6 Pages



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No Preview Available ! EMB06N03H datasheet, circuit

 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
6.5mΩ 
ID  75A 
 
UIS, Rg 100% Tested 
G
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMB06N03H
LIMITS 
UNIT 
GateSource Voltage 
VGS  ±20 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
ID 
IDM 
75 
45 
160 
Avalanche Current 
IAS  53 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH 
EAS 
EAR 
140 
40 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
PD 
Tj, Tstg 
60 
32 
55 to 175 
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V NCH
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
V 
A 
mJ 
W 
°C 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
2.5 
°C / W 
50 
2009/6/8 
p.1 

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EMB06N03H equivalent
EMB06N03H
 
 
 
 
G a te C h a rg e C h a ra c te ris tic s
12
  ID = 3 0 A
  10
 8
V DS =5V
10V
 6
15V
 
4
 
2
 
 0
0
20 40
60
Q g ,G a te C h a rg e ( n C )
 
10 4
10 3
10 2
C a p a c ita n c e  C h a ra c te ris tic s
C is s
C oss
C rss
f =  1  M H z
V GS= 0  V
0 5 10 15 20 25
V DS ‐D ra in S o u rc e  V o lta g e ( V  )
30
 
MAXIMUM SAFE OPERATING AREA
300
  200
  100
R d s (o  n ) Limit
10μ  s
  50
100μ  s
  20
1ms
10
 
5
 2
10ms
D1C00ms
 1
  0.5
VG  S = 10V
SRIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
0.5 1
 
10
VD S  ,DRAIN‐ SOURCE VOLTAGE( V )
100
 
 1
  Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
  0.3
  0.2 0.2
  0.1 0.1
0.05
  0.05
  0.02
0.03
0.01
  0.02
Single Pulse
  0.01
102
101
 
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ  J C  =2.5°C/W
3.TJ  ‐  T C  = P * R θ J C  (t)
4.Rθ  J C (t)=r(t) * RθJC
1 10
t 1 ,Time ( mSEC )
100
 
 
 
 
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000 SRθI N JC  G= L2E. 5P° UC/LWSE
TC  = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC ) 
1000
1000
2009/6/8 
p.5 


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Part Details

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Information Total 6 Pages
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