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PDF IRLB8314PbF Data sheet ( Hoja de datos )

Número de pieza IRLB8314PbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
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IRLB8314PbF
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Best in Class Performance for UPS/Inverter Applications
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
D
G
S
Base part number Package Type
IRLB8314PbF
TO-220Pak
G
Gate
Standard Pack
Form
Quantity
Tube
50
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID (Silicon Limited)
ID (Package Limited)
30
2.4
3.2
40
171
130A
V
m
nC
A
GDS
TO-220Pak
D
Drain
S
Source
Orderable Part Number
IRLB8314PbF
Absolute Maximium Rating
Symbol
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Symbol
Parameter
RJC
RCS
Junction-to-Case
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Notes through are on page 8
Max.
± 20
171
120
130
664
125
63
0.83
-55 to + 175
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.50
–––
Max.
1.2
–––
62
Units
V
A
W
W
W/°C
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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August 11, 2014

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IRLB8314PbF pdf
10
ID = 86A
8
6
4 TJ = 125°C
2
TJ = 25°C
0
2
6 10 14 18
VGS, Gate-to-Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
IRLB8314PbF
800
ID
T OP
14A
30A
600 BOTT OM 68A
400
200
0
25
50 75 100 125 150
Starting T J, Junction Temperature (°C)
175
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2014 International Rectifier
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August 11, 2014

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