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PDF IXFV22N60PS Data sheet ( Hoja de datos )
| Número de pieza | IXFV22N60PS | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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PolarHVTM HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 22N60P
IXFV 22N60P
IXFV 22N60PS
VDSS = 600 V
ID25 = 22 A
RDS(on) ≤ 350 m Ω
trr ≤ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FMCd
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting Force
(TO-247)
(PLUS220)
TO-247
PLUS220 & PLUS220SMD
TO-247 (IXFH)
Maximum Ratings
600 V
600 V
±30
±40
V
V
GDS
22 A
66 A PLUS220 (IXFV)
22 A
40 mJ
1.0 J
20 V/ns
GDS
D (TAB)
D (TAB)
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
11..65/2.5..15 Nm/lb.
6g
4g
PLUS220SMD (IXFV...S)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
350 m Ω
Features
l Fast intrinsic diode
l Unclamped Inductive Switching (UIS)
rated
l International standard packages
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99315E(03/06)
1 page  
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_22N60P (6J) 02-17-06-B
5 Page | ||
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| PDF Descargar | [ Datasheet IXFV22N60PS.PDF ] | |
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