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Datasheet SP8680B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SP8680B | ECL variable modulus divider SP8680B
575MHz410/11
ADVANCE INFORMATION
DS3645-1·2
The SP8680B is an ECL variable modulus divider, with ECL and TTL compatible outputs. The circuit can operate from either ECL or TTL supplies. It divides by 10 when either of the ECL control inputs, PE1 or PE2, is in the high state and by 11 when |  GEC Plessey Semiconductors | data |
SP8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SP80001 | 800MHz Low-loss SAW Filter 53MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute
800MHz Low-loss SAW Filter 53MHz Bandwidth
Part Number: SP80001
www.sipatsaw.com
SIPAT Co., Ltd.
Specifications
Parameter Center Frequency
Insertion Loss 1 dB Bandwidth 3 dB Bandwidth 35 dB Bandwidth Pass  SIPAT filter | | |
| 2 | SP8005 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8005
Ver 2.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.5 @ VGS=4.5V 3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V 4.3 @ VGS=3.1V 5.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON).  SamHop Microelectronics transistor | | |
| 3 | SP8006 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8006
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
4.5 @ VGS=4.5V 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON SamHop Microelectronics transistor | | |
| 4 | SP8007 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8007
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.8 @ VGS=4.5V 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). SamHop Microelectronics transistor | | |
| 5 | SP8008 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8008
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Typ
3.9 @ VGS=10V 30V 28A 4.2 @ VGS=4.5V 5.2 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mo SamHop Microelectronics transistor | | |
| 6 | SP8009 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
24A
R DS(ON) (m Ω) Typ
6.0 @ VGS=10V 7.2 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
P SamHop Microelectronics transistor | | |
| 7 | SP8009E | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009E
Ver 1.5
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
33V
ID
24A
R DS(ON) (m Ω) Typ
5.0 @ VGS=10V 6.5 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. E SamHop Microelectronics transistor | |
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