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PDF AUIRF7805Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7805Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD – 96367B
Features
l Advanced Planar Technology
l Low On-Resistance
l Logic Level
l N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free, RoHS Compliant
AUIRF7805Q
HEXFET® Power MOSFET
S1
S2
S3
G4
VAA
8D
(BR)DSS
30V
7D
6D
5D
RDS(on) typ. 9.2mΩ
max. 11mΩ
Top View
ID
13A
Description
Specifically designed for Automotive applications,
these HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient
and reliable device for use in Automotive applications
and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristicsanddualMOSFETdiecapabilitymaking
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
ePower Dissipation
ePower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
eRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11
1 page  
AUIRF7805Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
A5
6
E
8765
12 3 4
B
H
0.25 [.010]
A
6X e
e1
8X b
A1
0.25 [.010] C A B
A
C
0.10 [.004]
y
DIM
INCHE S
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BASIC
e 1 .025 BASIC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
8°
MIL L IME T E R S
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BASIC
0.635 BASIC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
K x 45°
8X L 8X c
7
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
SO-8 Part Marking
F OOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7805Q.PDF ] | |
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