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What is IRL8113SPbF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRL8113SPbF Datasheet PDF - International Rectifier

Part Number IRL8113SPbF
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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Total 12 Pages



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PD - 95582
IRL8113PbF
IRL8113SPbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
VDSS
30V
IRL8113LPbF
HEXFET® Power MOSFET
RDS(on) max Qg (Typ.)
6.0m:
23nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL8113
D2Pak
IRL8113S
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Max.
30
± 20
h105
74 h
420
110
57
0.76
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
Notes  through ‡ are on page 12
www.irf.com
TO-262
IRL8113L
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/20/04

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IRL8113SPbF equivalent
IRL8113/S/LPbF
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.430 0.000266
τ3τ3 0.397 0.000685
0.493 0.007393
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRL8113SPbF electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IRL8113SPbFThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier

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