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What is F20NM60D?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "STF20NM60D".


F20NM60D Datasheet PDF - STMicroelectronics

Part Number F20NM60D
Description STF20NM60D
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STF20NM60D - STP20NM60FD
STW20NM60FD
N-channel 600V - 0.26- 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type
STF20NM60D
STP20NM60FD
STW20NM60FD
VDSS
600V
600V
600V
RDS(on)
<0.29
<0.29
<0.29
ID Pw
20A 192W
20A 45W
20A 214W
High dv/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistancE
Tight process control and high manufacturing
yields
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
Switching application
TO-247
3
2
1
TO-220FP
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STF20NM60D
STP20NM60FD
STW20NM60FD
Marking
F20NM60D
P20NM60FD
W20NM60FD
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
Tube
Tube
August 2006
Rev 4
1/15
www.st.com
15

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F20NM60D equivalent
STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 300V, ID = 10A
RG = 4.7VGS = 10V
(see Figure 16)
VDD = 480 V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see Figure 16)
25 ns
12 ns
8 ns
22 ns
30 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 25°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 150°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
240
1800
16
396
2960
20
20
80
1.5
A
A
V
ns
nC
A
ns
nC
A
5/15


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Part NumberDescriptionMFRS
F20NM60DThe function is STF20NM60D. STMicroelectronicsSTMicroelectronics

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