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PDF Si4410DYPbF Data sheet ( Hoja de datos )
| Número de pieza | Si4410DYPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de Si4410DYPbF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
l Lead-Free
Description
This N-channel HEXFET® Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
PD - 95168
Si4410DYPbF
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
VDSS = 30V
6D
5 D RDS(on) = 0.0135Ω
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
dv/dt
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
30
±10
±8.0
±50
2.5
1.6
0.02
5.0
400
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V/ns
mJ
V
°C
Units
°C/W
1
09/22/04
1 page  
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
Si4410DYPbF
100
80
60
40
20
0
0.01
0.1 1
10
Time (sec)
A
100
Fig 10. Typical Power Vs. Time
100
D = 0.50
10
0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si4410DYPbF.PDF ] | |
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