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What is RJK0223DNS?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N Channel Power MOS FET".


RJK0223DNS Datasheet PDF - Renesas Technology

Part Number RJK0223DNS
Description Silicon N Channel Power MOS FET
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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Total 11 Pages



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Preliminary Datasheet
RJK0223DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0126EJ0110
Rev1.10
May 16, 2012
Application
DC-DC conversion for PC and Server.
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JD-A
(Package: HWSON3046-8)
5678
234
D1 D1 D1
9
S1/D2
5678
4321
1
G1
MOS1
8
G2
9 1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 
3. Tc = 25C
MOS1
25
±20
14
56
14
5
3.1
8
150
–55 to +150
Ratings
MOS2
25
±20
16
64
16
8.5
9.0
10
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0126EJ0110 Rev1.10
May 16, 2012
Page 1 of 10

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RJK0223DNS equivalent
RJK0223DNS
Static Drain to Source On State Resistance
vs. Temperature
20
Pulse Test
16
ID = 2 A, 5 A, 10 A
12 VGS = 4.5 V
8
10 V
4
2 A, 5 A, 10 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
ID = 14 A
40
20
VGS 16
30
VDS
20
VDD = 20 V
10 V
12
8
10 4
VDD = 20 V
10 V
00
0 4 8 12 16 20
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
5
4
3
2
1
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
30
VGS = 0
10 f = 1 MHz
0
10
Crss
20 25
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
20
10 V
5V
16
Pulse Test
12
8
4 VGS = 0, –5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
R07DS0126EJ0110 Rev1.10
May 16, 2012
Page 5 of 10


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RJK0223DNS electronic component.


Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
RJK0223DNSThe function is Silicon N Channel Power MOS FET. Renesas TechnologyRenesas Technology

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