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PDF LDTC143TM3T5G Data sheet ( Hoja de datos )
| Número de pieza | LDTC143TM3T5G | |
| Descripción | Bias Resistor Transistors | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series
With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
3
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
2
which is designed for low power surface mount applications.
1
ƽSimplifies Circuit Design
ƽReduces Board Space
SOT-723
ƽReduces Component Count
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
ƽThese are Pb-Free Devices.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
PIN 1
BASE
(INPUT)
R1
R2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
50
50
100
Max
Vdc
Vdc
mAdc
Unit
MARKING DIAGRAM
3
XX M
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
PD
RθJA
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
480 (Note 1)
205 (Note 2)
mW
mW/°C
°C/W
12
xx = Specific Device Code
M = Date Code
Junction Temperature
TJ 150
°C
Storage Temperature Range
Tstg –55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Rev.O 1/14
1 page  
1
IC/IB = 10
0.1
0.01
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EM3T5G
TA = −25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001 0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
50 10 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
10
25°C
TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
0.01
VO = 5 V
50 0.001 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
Rev.O 5/14
5 Page 
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
PACKAGE DIMENSIONS
SOT−723
−X−
D
b1
−Y−
3
12
E
A
L HE
b 2X
e 0.08 (0.0032) X Y
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.45 0.50 0.55 0.018 0.020 0.022
b 0.15 0.20 0.27 0.0059 0.0079 0.0106
b1 0.25 0.3 0.35 0.010 0.012 0.014
C 0.07 0.12 0.17 0.0028 0.0047 0.0067
D 1.15 1.20 1.25 0.045 0.047 0.049
E 0.75 0.80 0.85 0.03 0.032 0.034
e 0.40 BSC
0.016 BSC
H E 1.15 1.20 1.25 0.045 0.047 0.049
L 0.15 0.20 0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
ǒ mm Ǔ
inches
Rev.O 11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet LDTC143TM3T5G.PDF ] | |
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