LBC846ADW1T1G Datasheet PDF - Leshan Radio Company
| Part Number | LBC846ADW1T1G | |
| Description | Dual General Purpose Transistors | |
| Manufacturers | Leshan Radio Company | |
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LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
6 54
LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
S-LBC846ADW1T1G
S-LBC846BDW1T1G
S-LBC847BDW1T1G
S-LBC847CDW1T1G
S-LBC848BDW1T1G
S-LBC848CDW1T1G
Q2 Q1 See Table
6
5
4
12
MAXIMUM RATINGS
3
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
V CEO
V CBO
V EBO
IC
BC846
65
80
6.0
100
BC847 BC848
45 30
50 30
6.0 5.0
100 100
Unit
V
V
V
mAdc
1
2
3
SOT-363 /SC-88
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
Symbol
PD
R θJA
T J , T stg
Max Unit
380 mW
250 mW
3.0
328
–55 to +150
mW/°C
°C/W
°C
ORDERING INFORMATION
LBC846ADW1T1G
LBC846ADW1T3G
Device
S-LBC846ADW1T1G
S-LBC846ADW1T3G
LBC846BDW1T1G
LBC846BDW1T3G
LBC847BDW1T1G
LBC847BDW1T3G
LBC847CDW1T1G
S-LBC846BDW1T1G
S-LBC846BDW1T3G
S-LBC847BDW1T1G
S-LBC847BDW1T3G
S-LBC847CDW1T1G
LBC847CDW1T3G
S-LBC847CDW1T3G
LBC848BDW1T1G
S-LBC848BDW1T1G
LBC848BDW1T3G
S-LBC848BDW1T3G
LBC848CDW1T1G
LBC848CDW1T3G
S-LBC848CDW1T1G
S-LBC848CDW1T3G
Marking
1A
1A
1B
1B
1F
1F
1G
1G
1K
1K
1L
1L
Shipping
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
Rev.O 1/6
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LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
0
SINGLE PULSE
1.0
P (pk)
t1
t2
DUTY CYCLE, D = t 1 /t 2
Z θJA (t) = r(t) R θJA
R θJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T J(pk) – T C = P (pk) R θJC (t)
10
100
1.0K
10K
t, TIME (ms)
Figure 11. Thermal Response
100K
1.0M
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0 -10
-30 -45 -65 -100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
The safe operating area curves indicate I C –V CE limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T J(pk) = 150°C; T C or
T A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T J(pk) < 150°C. T J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
Rev.O 5/6
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| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ LBC846ADW1T1G.PDF Datasheet ] | |
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| LBC846ADW1T1G | The function is Dual General Purpose Transistors. Leshan Radio Company | |
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